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PDF] An Exact Analysis for Freeze-out and Exhaustion in Single Impurity Semiconductors | Semantic Scholar
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PDF) A quartic solution covering freeze-out and exhaustion effects in doubly doped P-type equilibrium semiconductors
CRYOGENIC TEMPERATURE CHARACTERISTICS OF BULK SILICON AND SILICON- ON-SAPPHIRE DEVICES by STEVEN ALLEN MELTON B.S., Kansas State
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A Quartic Solution Covering Freeze-out and Exhaustion in P-type Compensated Semiconductors | Semantic Scholar
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Chapter Intrinsic: -- case for pure Si -- # electrons = # holes (n = p) Extrinsic: -- electrical behavior is determined by presence of impurities. - ppt download
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Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN: Applied Physics Letters: Vol 101, No 8
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